Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
747833 | Solid-State Electronics | 2015 | 5 Pages |
Abstract
We report on AlN/GaN double heterostructures for high frequency applications. 600 h preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) up to 40 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
F. Medjdoub, M. Zegaoui, A. Linge, B. Grimbert, R. Silvestri, M. Meneghini, G. Meneghesso, E. Zanoni,