| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747835 | Solid-State Electronics | 2015 | 7 Pages |
Abstract
Extremely narrow and bulk-like p-type InAs–Si nanowire TFETs are studied using (i) a full-band and atomistic quantum transport simulator based on the sp3d5s∗sp3d5s∗ tight-binding model and (ii) a drift–diffusion TCAD tool. As (iii) option, a two-band model and the WKB approximation have been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs–Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.
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Authors
Hamilton Carrillo-Nuñez, Mathieu Luisier, Andreas Schenk,