| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747909 | Solid-State Electronics | 2011 | 7 Pages |
An analytical and explicit compact model for undoped symmetrical silicon double gate MOSFETs (DGMOSFETs) with Schottky barrier (SB) source and drain is presented. The SB MOSFET can be studied as a traditional MOSFET where the doped source/drain regions have been replaced by a metal contact. Due to particular features of this new structure, the main transport mechanisms of these devices differ from those found in traditional MOSFETs. The model developed in this paper is based on a previously published DGMOSFET model which has been extended to include the characteristic tunneling transport mechanisms of SB MOSFET.The proposed model reproduces the well known ambipolar behavior found in SB MOSFET for a wide range of metal source and drain contacts specified through different values of their work function. The model has been validated with numerical data obtained by means of the 2D ATLAS simulator, where a SB DGMOSFET structure has been defined and characterized in order to obtain the transfer and output characteristics for several bias configurations. Devices with two channel lengths (2 μm and 3 μm) has been simulated and modeled.
► We present a compact model for long-channel Schottky barrier double gate MOSFETs. ► Our compact model includes all transport mechanisms that are relevant in the targeted devices: tunneling, thermionic emission and drift–diffusion. ► Our model considers both electron and hole transport. ► Our model agrees very well with 2D TCAD simulations in all operating regimes.
