| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747912 | Solid-State Electronics | 2015 | 5 Pages |
•Enhanced WPE of VLEDs using trench etching and arrayed p-electrodes is reported.•Calculated and experimental results justify the effect of the proposed scheme.•Trench design enhances light emission through releasing total internal reflection.•Arrayed p-electrodes improve current spreading of the proposed VLED.•Enhancement in WPE of VLED with a 2 × 2 array by 2.79% at 364.4 mA/mm2 is obtained.
We investigate the effect of trench etching and arrayed p-electrodes in improving current spreading and the efficiency of light extraction of GaN-based vertical-structured light-emitting diodes (VLEDs). Both simulated and experimental results on the uniformities of current distribution and light emission are presented and discussed. For a 2 × 2 array VLED with a die size of 1020 × 1020 μm2, enhancements in light output power by 0.38% (6.03%) and wall-plug efficiency by 2.79% (2.32%) at 364.4 mA/mm2 (728.9 mA/mm2) as compared with that of regular VLED are achieved experimentally, which are attributed to improved current spreading from the arrayed p-electrode and trench designs as well as enhanced light emission from the trench region.
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