Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models

In this paper we extend our compact model for nanoscale double-gate (DG) MOSFETs which considers a hydrodynamic transport model to include the effect of the temperature dependence. Temperature dependence equations are incorporated to the expressions of the mobility and saturation velocity. For model validation we have considered a symmetric 22 nm double-gate MOSFET template device optimized for low-stand-by-power applications. Comparison between the numerical 2D Monte Carlo (MC) simulations and the compact model shows a good degree of agreement.