| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747927 | Solid-State Electronics | 2014 | 7 Pages |
Abstract
We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Xiaojuan Lian, Enrique Miranda, Shibing Long, Luca Perniola, Ming Liu, Jordi Suñé,