| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747986 | Solid-State Electronics | 2013 | 9 Pages |
Abstract
This paper presents a combined pulsed I(V)–pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the safe operating area (SOA) of advanced SiGe:C HBTs. System behavior is explained in detail and reproduced by simulation taking into account the influence of all parasitic components. Optimization steps, system verification, measurement results and accuracy issues are presented.
► Advanced pulsed I(V) and pulsed RF measurement system is proposed. ► Advanced SiGe:C HBT technology is characterized. ► Self-heating inside the device has been significantly decreased. ► Pulse simulations using a distributed thermal network are carried out.
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Authors
Mario Weiß, Sébastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer,