| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747988 | Solid-State Electronics | 2013 | 6 Pages |
Electric conduction in ovonic materials is analyzed with special attention to chalcogenide glasses used for phase-change memories. A general theory is presented based on plausible microscopic assumptions. Electric field, carrier concentration, and electron temperature along the device, as well as diffusion and Poisson self-consistency, are considered. The effect of different ranges of localized levels in the gap is analyzed. The results account for and interpret all main experimental findings in phase-change memory cells.
► Carrier transport in ovonic materials is modeled by means of trap-limited conduction. ► The effect of the energy levels of the traps is evaluated. ► Results fit experimental data. ► The threshold voltage is attributed to carrier heating.
