| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 747995 | Solid-State Electronics | 2013 | 5 Pages |
A new parameter extraction methodology based on split C–V is proposed for FDSOI MOS devices. To this end, a detailed capacitance theoretical analysis is first conducted emphasizing the usefulness of the Maserjian function. Split C–V measurements carried out on various FDSOI CMOS technologies show that the Maserjian function exhibits a power law dependence with inversion charge as ∝Qi−2 whatever the carrier type and gate oxide thickness. This feature enables to confirm the validity of a two-parameter simple capacitance model and allows for a reliable MOSFET parameter extraction in FDSOI devices.
► Extraction electrical parameters on FD SOI devices based on Split C-V measurement. ► New way to model the FD SOI capacitance. ► Electrical extraction of flat band voltage on FD SOI devices.
