On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories

In this work, we study the impact of Ag doping on GeS2-based CBRAM devices employing Ag as active electrode. Several devices with Ag doping varying between 10% and 24% are extensively analyzed. First, we assess switching voltages and time-to-set as a function of Ag concentration in the electrolyte layer. Subsequently, we evaluate the two most important reliability aspects of RRAM devices: endurance and data retention at different temperatures. The results show that an increase of Ag doping in the GeS2 layer yields a strong improvement to both endurance and data retention performances. The extrapolated temperature allowing for 10 years data retention increases from 75 °C for the 10% Ag-doped sample to 109 °C for the 24% Ag-doped one.

► We fabricated CBRAM devices, employing Ag-doped GeS2 as solid electrolyte. ► Ag doping concentrations were varied between 10% and 24%. ► We assess switching voltages and time-to-set as a function of Ag concentration. ► We evaluate endurance and data retention at different temperatures. ► Increase of Ag doping in the GeS2 layer yields improvement to devices reliability.