Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748058 | Solid-State Electronics | 2013 | 5 Pages |
In this work, electroluminescence from the intrinsic Germanium layer of tensile strained Germanium LEDs is observed at room temperature. The pin LEDs are fabricated by low temperature molecular beam epitaxy with a double-heterojunction process on Silicon substrates. The tensile strain is adjusted at 0.24% with an annealing step at 700 °C leading to a lowering of the direct band gap. Electroluminescence spectra show a value of 0.781 eV for the direct band gap or an infrared shift of 19 meV. Increasing of the intrinsic layer thickness leads to higher electroluminescence intensity.
► Electroluminescence in tensile strained Germanium LEDs is observed at room temperature. ► The LEDs are fabricated by low-temperature MBE using a double-heterojunction design. ► Tensile strain values of 0.24% are achieved after annealing at 700 °C. ► The electroluminescence spectra show direct band gap value of 0.781 eV.