Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748074 | Solid-State Electronics | 2009 | 4 Pages |
Abstract
We have proposed a novel method to form by microfabrication a uniaxial tensile strained Ge layer due to the elastic strain relaxation of a Si1−xGex buffer layer on a Si(0 0 1) substrate. A fully strain-relaxed Ge layer on a compressive strained Si0.60Ge0.40 was epitaxially grown on Si(0 0 1) substrate and striped mesa lines were fabricated with a line width of 250 nm along the [1 1 0] direction. The strain of the Si0.60Ge0.40 layer was found to be elastically relaxed only along the direction perpendicular to the lines and a uniaxial tensile strained Ge layer was thus formed. The value of tensile strain of the Ge layer is estimated to be 0.25%.
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Engineering
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Authors
Takuya Mizutani, Osamu Nakatsuka, Akira Sakai, Hiroki Kondo, Masaki Ogawa, Shigeaki Zaima,