| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748085 | Solid-State Electronics | 2014 | 8 Pages |
•We perform a physically based TCAD calibration on experimental data.•The calibrated model fits consistently DC, transient and electro-thermal experimental data.•The calibration procedure is general and can be applied to every family of IGBT devices.
TCAD simulators are a consolidate tool in the field of the semiconductor research because of their predictive capability. However, an accurate calibration of the models is needed in order to get quantitative accurate results. In this work a calibration procedure of the TCAD elementary cell, specific for Trench IGBT with a blocking voltage of 600 V, is presented. It is based on the error minimization between the experimental and the simulated terminal curves of the device at two temperatures. The procedure is applied to a PT-IGBT and a good predictive capability is showed in the simulation of both the short-circuit and turn-off tests.
