| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748109 | Solid-State Electronics | 2012 | 7 Pages |
Abstract
⺠The triple δ-doped densities are found to be crucial for improving HEMT performance. ⺠The band diagrams, carrier densities and DC and microwave properties are reported. ⺠Good agreements between experimental results and theoretical simulations are found.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Kuei-Yi Chu, Shiou-Ying Cheng, Meng-Hsueh Chiang, Yi-Jung Liu, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Wen-Chau Liu, Wen-Yu Cheng, Bin-Cian Lin,