Article ID Journal Published Year Pages File Type
748112 Solid-State Electronics 2012 4 Pages PDF
Abstract

We investigate the effect of the thermal treatment on the reduction of the trap density (Nit) at the organic–organic interface together with the mobility dependency to the gate-bias in an organic thin-film transistor (OTFT). The Nit between a poly(4-vinylphenol) layer and a pentacene film is found to be reduced due to the rearranged pentacene molecules during thermal treatment and the resultant mobility is obtained as high as 1.78 cm2/V s. In addition, the mobility dependency to the gate-bias is decreased at the case of thermally-treated OTFT. It can be concluded that the Nit plays an important role on the electrical performances as well as the bias-stability.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Effect of the thermal treatment on the reduction of the trap density was studied. ► Gate-bias dependency of the mobility was examined in a viewpoint of the trap density. ► High mobility of 1.78 cm2/V s was obtained in thermally treated transistor. ► Role of the interfacial trap density for bias-stability and performance were described.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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