| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748117 | Solid-State Electronics | 2012 | 6 Pages |
The dual-gate IGZO TFT is proposed to be used in an active matrix touch sensing circuit. The circuit contains only one TFT with a RC low-pass filter, since the dual-gate IGZO TFT can be controlled by both its top and bottom gates. The simplest structure maximizes the sensing pad area in the pixel. A touch event on the sensing pad forms a capacitance and thus increases the RC time-constant of the scan pulse fed to the gate of TFT. Thus, a significant transient ON current is generated to be the sensing signal. The current is so large that it can be easily read out and thus the power and cost of peripheral ICs can be reduced. In this paper, the robustness of the circuit to environment in operations is discussed.
► Active matrix touch panel fabricated by dual-gate IGZO TFT is proposed. ► A novel touch sensing method is proposed in this paper. ► The simplest structure maximizes the sensing pad area in the pixel. ► The power and cost of peripheral ICs can be reduced in this sensing circuit. ► The touch panel is equipped with high stability.
