| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748126 | Solid-State Electronics | 2009 | 4 Pages |
Abstract
In this study, we compare our InAlAs-InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs-InP and InP-InAlAs composite emitters can effectively reduce electron pile-up as found in the InP/GaAsSb DHBT, thus increasing current gain significantly at low current density. Although electron pile-up is found in the InP/GaAsSb DHBT from the type-II conduction band barrier, it shows better operation at the high current regime than composite emitter structures because at high bias the abrupt heterojunction formed at the InP-InAlAs interface blocks carriers and degrades the inject efficiency.
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Authors
Chun-ting Pan, Che-ming Wang, Yue-ming Hsin, H.J. Zhu, J.M. Kuo, Y.C. Kao,