Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748131 | Solid-State Electronics | 2009 | 6 Pages |
Abstract
A new analytical threshold voltage model for the doped polysilicon thin-film transistors (poly-Si TFTs) is proposed in this paper, which is related to U-shaped distribution of density of states in the grain boundary, the gate oxide thickness, the substrate doping concentration, and the grain size. Moreover, the new model has a simple functional form and it can reduce to the threshold voltage model of the conventional long channel MOSFET when the grain size is large.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Weijing Wu, Ruohe Yao, Xueren Zheng,