| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748137 | Solid-State Electronics | 2009 | 4 Pages |
Abstract
This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jong-Won Lee, Seong-Wan Ryu, Dong Ok Shin, Bong Hoon Kim, Sang Ouk Kim, Yang-Kyu Choi,