Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748138 | Solid-State Electronics | 2009 | 5 Pages |
Abstract
We present a novel single-poly-silicon EEPROM cell for embedded memory. The cell is integrated in a 0.13 μm RF-CMOS technology without process modifications and is composed of an NMOS transistor and a MOS capacitor on two isolated P-wells sharing a floating poly-silicon layer. A two-polarity voltage of ±6 V is applied for writing and erasing using uniform-channel Fowler–Nordheim tunnelling. Operations faster than 1 ms, endurance over 10+3 cycles and data retention longer than 10 years are demonstrated.
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Authors
A. Di Bartolomeo, H. Rücker, P. Schley, A. Fox, S. Lischke, Kee-Yeol Na,