| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748166 | Solid-State Electronics | 2009 | 9 Pages |
Abstract
We found that the impact of channel thickness discontinuity on the on-current is larger when the nonuniformities are located close to the Virtual Source of the device. Furthermore, the sensitivity of the on-current to thickness nonuniformity is essentially the same when considering devices with different crystal orientations. Comparison with drift-diffusion simulations reveals substantial differences in the predicted trends of the sensitivity of the drain current to thickness fluctuations in these nanoscale devices.
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Authors
N. Serra, P. Palestri, G.D.J. Smit, L. Selmi,