Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748170 | Solid-State Electronics | 2009 | 10 Pages |
Abstract
The confined states in strained silicon fully depleted silicon-on-insulator MOSFETs are investigated using full-band k.p method within the envelope-function approximation. Full-band calculations of important transport parameters – energy band shifts, curvature masses and density-of-state masses – show new results, rising the issues of the limit of simple models like the effective mass approximation and the 6-level k.p model.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
D. Rideau, M. Feraille, M. Michaillat, Y.M. Niquet, C. Tavernier, H. Jaouen,