Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748171 | Solid-State Electronics | 2009 | 6 Pages |
Abstract
We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I–V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.
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Electrical and Electronic Engineering
Authors
Roberto Grassi, Stefano Poli, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani,