Article ID Journal Published Year Pages File Type
748171 Solid-State Electronics 2009 6 Pages PDF
Abstract

We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I–V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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