| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748178 | Solid-State Electronics | 2013 | 8 Pages |
Abstract
⺠A novel SOI-LIGBT device with high reliability is discussed and developed. ⺠The improved layout is selected to avoid the anode punch-through. ⺠The stretched terminal is adopted to increase the off-state breakdown voltage. ⺠The LV-pwell attaching the P-body is added to reduce the hot-carrier degradation. ⺠The deep p-type layer is implanted to improve the anti-latch-up capability.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Siyang Liu, Tingting Huang, Weifeng Sun, Chunwei Zhang,