Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer

Two-dimensional numerical simulations were performed in order to confirm some hypotheses proposed to explain the gain behavior observed in the experimental data. By using numerical simulations the channel length has been varied, showing that the gain of buffers implemented with GC devices remains close to the theoretical limit even when short-channel devices are adopted. It has also been shown that the length of a source-follower buffer using GC devices can be reduced by a factor of 5, in comparison with a standard SOI MOSFET, without gain loss or linearity degradation.