Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748205 | Solid-State Electronics | 2008 | 9 Pages |
Abstract
In this paper, we present a new method to measure light intensity in a floating body partially depleted SOI MOSFET. The photo-generated charge density in the MOSFET is converted into a charge pumping frequency needed to maintain the drain current at a constant value. This new approach contrasts with conventional techniques that rely on an accurate drain current evaluation. According to our measurements, flux densities as low as 2 mW/m2 were obtained using a regular SOI MOSFET, thus confirming the potentials of this approach.
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Authors
L. Harik, J.M. Sallese, M. Kayal,