Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748217 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
In this paper, we have prepared Schottky type ZnO metal–semiconductor–metal (MSM) ultraviolet (UV) detector. The structural, electrical, and optical measurements were carried out. The detector exhibited a peak responsivity of 0.337 A/W at 360 nm and the dark current was about 1 nA under 3 V bias. An ultraviolet–visible rejection ratio was obtained about more than four orders of magnitude from the fabricated detector. The 10–90% rise and fall time were 20 ns and 250 ns, respectively. We proposed that the detector had shown a gain, which was attributed to the trapping of hole carriers at the semiconductor–metal interface.
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Authors
Dayong Jiang, Jiying Zhang, Youming Lu, Kewei Liu, Dongxu Zhao, Zhenzhong Zhang, Dezhen Shen, Xiwu Fan,