| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748233 | Solid-State Electronics | 2008 | 8 Pages |
Abstract
In this paper we present a new approach to model mobility in organic thin film transistors, OTFTs, which is used to analyze the behavior of mobility in devices made of poly(methyl methacrylate), PMMA, on poly(3-hexylthiophene), P3HT, recently reported by us. It is also used to discuss differences observed between OTFTs made with other polymers and oligomers. The method allows the calculation of the characteristic temperature and energy distribution of localized states (DOS) in the active layer, considering an exponential distribution. It is also shown that using the extracted DOS parameters as input DOS parameters in ATLAS simulator, it is possible to reproduce very well the device characteristics.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M. Estrada, I. Mejía, A. Cerdeira, J. Pallares, L.F. Marsal, B. Iñiguez,