Article ID Journal Published Year Pages File Type
748247 Solid-State Electronics 2013 5 Pages PDF
Abstract
► Memory devices with 2D arrays of Si nanocrystals created by 1 keV ion implantation. ► More than 106 erase/write cycles without degradation of the memory window. ► Development of charge pumping technique for characterization of nanocrystals memory. ► Extraction of type, location, density… of trapping centers by charge pumping. ► Link between trapping centers and memory performance.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Authors
, , , , ,