Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748247 | Solid-State Electronics | 2013 | 5 Pages |
Abstract
⺠Memory devices with 2D arrays of Si nanocrystals created by 1 keV ion implantation. ⺠More than 106 erase/write cycles without degradation of the memory window. ⺠Development of charge pumping technique for characterization of nanocrystals memory. ⺠Extraction of type, location, density⦠of trapping centers by charge pumping. ⺠Link between trapping centers and memory performance.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
R. Diaz, J. Grisolia, B. Pecassou, M. Shalchian, G. BenAssayag,