Origin of the low-frequency noise in n-channel FinFETs

The origin of the low-frequency noise is investigated in n-channel fin-shaped field-effect transistors (FinFETs) in terms of the channel length and fin width. In long-channel and wide fin devices, the spectra are dominated by 1/f noise due to carrier number fluctuation, correlated with mobility fluctuations. In long-channel and narrow fin devices, the spectra are composed of both 1/f and excess generation–recombination (g–r) noise components. Analysis of the g–r noise parameters lead to the conclusion that the g–r noise originates from traps in the sidewall gate oxides and in a depletion region near the sidewall interfaces. In short-channel devices, the spectra show 1/f behavior in the weak inversion described by carrier number fluctuations and g–r noise component in the low drain current region, possibly originating from the source and drain contacts process.

► The impact of the fin width on the low-frequency noise behavior was investigated. ► Both long (L = 1 μm) and short (L = 25 nm) channel devices were studied. ► 1/f behavior in wide (W = 1 um) and long fin devices, compatible with CNF + CMF noise model. ► g–r noise presence in narrow (W < 65 nm) and long fin devices, due to the sidewalls interfaces contribution. ► g–r noise presence in narrow and short fin devices, due to process steps for the S and D contacts formation.