Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device

The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov–de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin–orbit interaction parameter of 1.71 × 10−11 eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin.

► We developed GaSb-based p-type quantum well with a large Rashba effect. ► Gate control of the Rashba effect in a p-type quantum well was investigated. ► We presented the feasibility of p-type quantum well for spin transistor. ► We propose a complementary logic device using n- and p-type spin transistors.