Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748258 | Solid-State Electronics | 2013 | 5 Pages |
We proposed models of subthreshold characteristics for deep nanoscale short channel asymmetric junctionless Double-Gate (DG) MOSFETs. Models were derived by solving 2-D Poisson’s equation using variable separation technique. The subthreshold behavior with structure asymmetry such as different gate oxide thicknesses and different gate biases between the front-gate and back-gate can be exactly described. Design parameters such as body doping, body thickness and channel length were considered. The models were verified by comparing with device simulations’ results.
► An junctionless short channel DG subthreshold current model has been proposed. ► It is applicable to both symmetric and asymmetric junctionless MOSFETs. ► It has been verified and matches well with TCAD simulations’ results.