Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs

In this paper we present the modeling of the main current transport mechanisms in Schottky barrier (Double-Gate) MOSFET devices. A detailed way of the two-dimensional modeling approach with further analyses of the primary current components is given. Afterwards, these analyses are the basis of the development of a fully 2D compact model, which is able to predict the current behavior in reasonable device structures. A comparison and verification with TCAD simulation and measurement data is done with the evolved model current equations.

► Modeling of the main current transport mechanisms in SB-(DG)-MOSFET devices. ► A detailed 2D modeling approach with analyses of the primary components is given. ► The 2D analyses are the basis of the development of a fully 2D compact model. ► A verification with TCAD simulation and measurements is done for the evolved model.