| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748277 | Solid-State Electronics | 2011 | 6 Pages |
The electrical properties of oxides grown on 3C-SiC by rapid thermal processing in various oxidizing and annealing atmospheres are investigated using a quasi-static method. According to the anomalous capacitance hump, the existence of two types of traps, interface and near interface oxide traps, is observed in quasi-static. By monitoring the sweep-rate measurement of the quasi-static current related to electron tunneling from interface traps to near-interface oxide traps, a profile of the traps in response time can be obtained. Based on the extracted parameters of the carrier traps, we demonstrate that the near SiO2/3C-SiC interface is significantly improved when using 100% N2O compared to 100% O2 or even N2–O2 dilution as oxidizing gas. Also, we show that incorporating N2 during the oxidation in O2 is not favourable for the reduction of the near-interface oxide traps.
► We study oxides grown on 3C-SiC by rapid thermal processing using a quasi-static method. ► We examine changes in the current profiles of the near-interface traps in response time. ► The near SiO2/3C-SiC interface is improved when using 100% N2O compared to 100% O2 or N2–O2 dilution. ► Incorporating N2 during O2 oxidation is not favourable for reduction of the near-interface traps.
