| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748284 | Solid-State Electronics | 2011 | 5 Pages |
This paper presents a two-dimensional analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs). Potential and electric field intensity calculated by Poisson’s equation are used to extract tunneling current values. The validity of the proposed model has been confirmed by comparing the analytical results with finite-element method (FEM) results.
► A two-dimensional analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs) has been presented. ► By solving Poisson’s equation, potential and electric field intensity have been calculated and then, BBT current has been estimated. ► The validity of the proposed model has been confirmed by comparing the analytical results with finite-element-method (FEM) results.
