Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748304 | Solid-State Electronics | 2008 | 6 Pages |
Abstract
This paper first discusses laser crystallization of silicon (Si) films with a carbon optical absorption layer, which makes it possible to use an infrared laser light. Then we discuss heat treatment with high-pressure H2O vapor for defect reduction of laser crystallized Si films and their interface for fabrication of high performance Si thin film transistors (TFTs). Finally, we present a method of transfer process of electrical circuits from original glass substrates to foreign plastic films, developed with GeO2 removing layer.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Kazuya Yoshioka, Toshiyuki Sameshima, Naoki Sano,