| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748318 | Solid-State Electronics | 2008 | 7 Pages |
Abstract
In this paper we present a specific spice static and dynamic model of microcrystalline silicon (μc-Si) thin film transistors (TFTs) taking into account the access resistances and the capacitors contributions. The previously existing models of amorphous silicon and polysilicon TFTs were not completely suited, so we combined them to build a new specific model of μc-Si TFTs. The reliability of the model is then checked by the comparison of experimental measurements to simulations and by simulating the characteristics of some electronic devices (OLED pixels, inverters, and so on).
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Authors
O. Moustapha, V.D. Bui, Y. Bonnassieux, J.Y. Parey,