Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748323 | Solid-State Electronics | 2008 | 6 Pages |
Abstract
We have proposed a new poly-Si TFT pixel, which can suppress TFT leakage current effect on active matrix organic diode (AMOLED) displays, by employing a new circular switching TFT and additional signal line for compensating the leakage current. When the leakage current of switching TFT is increased, the VGS of the current driving TFT in the proposed pixel is not altered by the variable data voltages due to the circular switching TFT. Our simulation results show that OLED current variation of the proposed pixel can be suppressed less than 3%, while that of conventional pixel exceeds 30%. The proposed pixel may be suitable to suppress the leakage current effect on AMOLED display.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jae-Hoon Lee, Hyun-Sang Park, Jae-Hong Jeon, Min-Koo Han,