| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748325 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
We studied a coplanar hydrogenated amorphous silicon thin-film transistor (TFT) to control the backlight brightness in liquid-crystal display (LCD). This was done by designing the inverse-staggered TFT for the switching device and the coplanar TFT to absorb the illumination from backlight. We achieved the field-effect mobility of 0.3 cm2/V s, threshold voltage of 3.6 V, and the subthreshold voltage swing of 1.3 V/d for the coplanar TFT. The TFT showed the photocurrent of ∼10−8 A and dark current of ∼10−11 A in the operation region of backlight for TFT–LCD. The dynamic range was 50 dB which is good enough to control the brightness of the backlight.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Se Hwan Kim, Eung Bum Kim, Hee Yeon Choi, Moon Hyo Kang, Ji Ho Hur, Jin Jang,
