Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748325 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
We studied a coplanar hydrogenated amorphous silicon thin-film transistor (TFT) to control the backlight brightness in liquid-crystal display (LCD). This was done by designing the inverse-staggered TFT for the switching device and the coplanar TFT to absorb the illumination from backlight. We achieved the field-effect mobility of 0.3 cm2/V s, threshold voltage of 3.6 V, and the subthreshold voltage swing of 1.3 V/d for the coplanar TFT. The TFT showed the photocurrent of ∼10−8 A and dark current of ∼10−11 A in the operation region of backlight for TFT–LCD. The dynamic range was 50 dB which is good enough to control the brightness of the backlight.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Se Hwan Kim, Eung Bum Kim, Hee Yeon Choi, Moon Hyo Kang, Ji Ho Hur, Jin Jang,