| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748330 | Solid-State Electronics | 2011 | 6 Pages |
We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by ‘preferential interfacial-nucleation model’ considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.
Research highlights► We report systematic study of Al-induced crystallization (AIC) of Si. ► We clarify AIC conditions to control preferential orientation, i.e., (1 0 0) or (1 1 1). ► We demonstrate epitaxial growth of Ge layers using AIC-Si templates.
