Article ID Journal Published Year Pages File Type
748332 Solid-State Electronics 2011 4 Pages PDF
Abstract
► Melting growth technique is investigated to obtain Ge layers on insulators (GOI). ► Growth-direction-dependent growth characteristics are clarified. ► Large area GOI with a mesh-pattern is demonstrated. ► This technique is useful to realize advanced transistors.
Keywords
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth
Authors
, , , , ,