Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmϕ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmϕ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.

► Melting growth of Ge layers on insulators (GOI) is investigated. ► Ni-imprint-induced Si (1 1 1) micro-crystals are employed as seed. ► Single-crystalline GOI (1 1 1) with large area (∼10 μmϕ) is realized. ► The tensile strain (∼0.2%) which enhances the carrier mobility is induced. ► This new method can be employed to realize the multi-functional SiGe LSI.