| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748360 | Solid-State Electronics | 2013 | 4 Pages |
The resistive switching and low frequency noise characteristics in In2Se3 nanowire PRAM devices with SiO2 passivation have been studied. The SiO2 passivation of the nanowires was adopted to lessen the thermal energy dissipation to the surroundings and as a result, the set/reset voltages and the corresponding power requirements have been reduced. The measured low frequency noise characteristics exhibit a typical 1/f noise behavior and show the same noise level after the SiO2 passivation.
► We report the effect of SiO2 passivation in In2Se3 nanowires PRAM device. ► The SiO2 passivation decreases the thermal energy dissipation in In2Se3 nanowires. ► The operation voltages are lowered by about 40% due to SiO2 passivation layer. ► In2Se3 nanowires show better resistive switching ratio than other PRAM devices. ► In2Se3 nanowires show superior 1/f noise characteristics to GST thin film.
