Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748380 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
The forward bias current–voltage (I–V) characteristics of n-GaN Schottky diodes on sapphire substrate were investigated over a wide temperature range of 70–500 K. For models based on localised regions of lowered Schottky barrier height, a distributed barrier height should be expected when these localised regions are comparable to or smaller in size than the depletion width. However, a suitable fit for the I–V curves, which exhibited anomalous two-step (kink) forward bias behaviour, was only obtained when modelling the leakier regions with a single reduced barrier height, by using a model of two discrete diodes in parallel.
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Authors
G. Parish, R.A. Kennedy, G.A. Umana-Membreno, B.D. Nener,