Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748400 | Solid-State Electronics | 2008 | 7 Pages |
Abstract
This paper presents an efficient formulation of a channel segmentation based approach to non-quasi-static modelling of the MOS transistor, in the context of a charge-based MOSFET model. In this minimal channel segmentation approach, only the essential charge equations are evaluated for each channel segment while other effects are handled at device level. As a result, simulation time is drastically reduced compared to a full channel segmentation approach. The model is validated versus measurement up to 10 GHz and passes relevant benchmark tests.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Matthias Bucher, Antonios Bazigos,