Article ID Journal Published Year Pages File Type
748413 Solid-State Electronics 2007 8 Pages PDF
Abstract

A straightforward methodology is presented to distinguish the presence of large amounts of interface traps causing weak Fermi-level pinning from other effects in MOS capacitors based on GaAs or other alternative semiconductors. This is done by using a simple extraction of a characteristic time constant. The observations for GaAs MOS capacitors are similar to those for Ge MOS capacitors. GaAs MOS capacitors using Ga2O3 and Al2O3 as gate dielectric were investigated and based on this methodology weak Fermi-level pinning due to interface traps was concluded for these devices.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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