| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748425 | Solid-State Electronics | 2013 | 4 Pages |
We propose a thermal sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). First, temperature dependences of transistor characteristics are compared between n-type TFTs with self-aligned and offset gate structures. It is confirmed that the temperature dependence of the offset TFT is larger. Next, a ring oscillator is composed using the n-type offset TFTs. It is clarified that the temperature can be detected by measuring the oscillation frequency. We think that this kind of thermal sensor is available as a digital device.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We propose a thermal sensor employing a ring oscillator composed of poly-Si TFTs. ► Temperature dependence of transistor characteristics of n-type offset TFTs is larger than SA TFTs. ► A ring oscillator is composed using the offset TFTs. ► The temperature can be detected by measuring the oscillation frequency. ► This kind of thermal sensor is available as a digital device.
