60-GHz transmit/receive switch using a p–n diode and MOS transistors in 130-nm CMOS

A single-pole-double-throw transmit/receive switch using a shunt p–n diode and shunt NMOS transistors in 130-nm CMOS technology that operates around 60 GHz is reported. The switch exhibits insertion loss of ∼2 and 3 dB for TX and RX mode, respectively at 60 GHz. The diode has ∼6X lower parasitic capacitance for given on resistance compared to NMOS transistors in the CMOS technology, which results in lower insertion loss. Furthermore, the p–n diode has greater than 11-V breakdown voltage, which enables the switch to attain higher than 18-dBm measured input 1-dB compression point. This is the highest among CMOS millimeter-wave switches reported up to date. Transmit to receive port isolation of the switch is ∼20 dB at 60 GHz.

► Detailed comparison between p–n diodes and MOSFET’s as a switching device. ► Illustration of hybrid switch with p–n diodes/NMOS for high P1 dB and low DC current. ► Extensive discussion of switching behavior and design of low power biasing network. ► Demonstration of the low insertion loss performance and measurement of high P1 dB.