| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748459 | Solid-State Electronics | 2013 | 4 Pages |
A unified analytical continuous model, based on an approximate solution of Poisson’s equation, is proposed for the current–voltage (I–V) characteristics of accumulation mode (junctionless FETs) and conventional inversion mode MOSFETs which have symmetric and asymmetric double-gate structures. As a unified model, it is applicable to both junctionless and conventional double-gate (DG) MOSFETs and also represents the I–V characteristics of the MOSFETs with symmetric and asymmetric cases. The model with symmetric and asymmetric gates accounts for body doping, body thickness, and front-gate and back-gate oxide thicknesses. The model is verified by comparing with TCAD simulation results and shows a good agreement.
► A unified analytical continuous current model has been proposed. ► It is applicable to both JL FETs and conventional MOSFETs. ► It is appropriate for both symmetric and asymmetric double-gate cases. ► It has been verified and matches well with simulation results.
