| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748468 | Solid-State Electronics | 2013 | 5 Pages |
A comparative study on the hot-carrier degradation between inversion mode and junctionless n-channel multiple gate MOSFET has been performed experimentally. The device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. However, this trend is reversed at high stress gate voltage. The highest degradation rate is found to occur at VG = VFB in JL transistors and at classical stress bias conditions (VG = VD/2) in IM transistor. 3-Dimensional device simulation is used to explain the observed results.
► Investigation of hot carrier effects in inversion mode and junctionless transistors. ► Device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. ► Device degradation is more significant in IM transistor than in IM transistor at high stress gate voltage.
